Showing posts with label Special Issue. Show all posts
Showing posts with label Special Issue. Show all posts

Dec 23, 2021

[Special Issue] ACM Transactions on Machine Learning for CAD / EDA

ACM Transactions on Design Automation of Electronic Systems
Special Issue on Machine Learning for CAD / EDA 

Guest Editors
• Yibo Lin, Peking University
• Avi Ziv, IBM Research, Haifa, Israel
• Haoxing Ren, NVIDIA Corp.

Advances in Machine Learning (ML) over the past half-dozen years have revolutionized the effectiveness of ML for a variety of applications. However, design processes present challenges that require parallel advances in ML and CAD as compared to traditional ML applications such as image classification. 
This special issue seeks original submission on ML applications to the entire design flow - including ML applications to validation and test. The application of machine learning to mask preparation and layout generation are topics which are seeing very active research recently. ML is also being applied to improve the robustness of integrated circuits and systems. Power and thermal management are probably the most important limiting factors for ICs today - ML-based techniques are being explored to address this bottleneck. All these topics, as well as further potential topics mentioned below, are of interest to this special issue. In addition to submissions from academia, submissions from industry are much welcome. 

Topics of interest to this special issue include, but not limited to, the following:
• ML for system-level design
• ML approaches to logic design and synthesis
• ML for timing
• ML for clock networks and power grids
• ML for variation-aware design, analysis and optimization
• ML for physical design
• ML for analog design
• ML for power and thermal management
• ML for Design Technology Co-Optimization (DTCO)
• ML methods to predict aging and reliability
• Labeled and unlabeled data in ML for CAD
• ML techniques for resource management in many cores
• ML for verification and validation
• ML for test
• ML for library design and optimization 

Important Dates:
• Submissions deadline: February 15, 2022
• First-round review decisions: April 15, 2022
• Deadline for revision submissions: May 15, 2022
• Notification of final decisions: June 15, 2022
• Tentative publication: Summer 2022 

Submission Information: 
Authors are encouraged to submit high-quality original research contributions. Please clearly identify the additional material from any original conference or workshop paper in your submitted manuscript. Submissions should be made through the ACM TODAES submission site (http://mc.manuscriptcentral.com/todaes) and formatted according to TODAES author guidelines at: https://dl.acm.org/journal/todaes/author-guidelines. Select the paper type “Special Issue on Machine Learning for CAD/EDA.” 

For questions and further information, please contact guest editors at:
Avi Ziv

Aug 3, 2021

IJHSES Special Issue Volume 29, Issue 01n04, 2020

IJHSES Special Issue on Nanotechnology for Electronics, Biosensors, 
Additive Manufacturing and Emerging Systems Applications 
Guest Editors: F. Jain, C. Broadbridge, M. Gherasimova and H. Tang
Volume 29, Issue 01n04 (March, June, September, December 2020) 

This Special issue on Nanotechnology for Electronics, Biosensors, Additive Manufacturing and Emerging Systems Applications comprises peer reviewed articles selected from the 29th annual symposium of the Connecticut Microelectronics and Optoelectronics Consortium (CMOC), virtually held on October 2, 2020 and hosted by Information Technology Staff, University of Connecticut (Storrs Campus).

Organized by a team of seven academic institutions and about eighteen companies across the United States, this symposium sign-posted the progress and development of state-of-arts research in high-speed electronics over the last 30 years.




Articles include keynote presentations by three experts in their field:
  • Dr. H. Lee, Electronic and IR Sensing in Forensics, U. New Haven, and Henry Lee Center for Forensic Research
  • Dr. E. Fossum, Quanta Image Sensor, Dartmouth College
  • Dr. J. Chow, Quantum Computing, IBM Thomas J. Watson, Research Center
The papers presented span from novel materials and devices, biosensors and bio- nano- systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields, Systems for implementing data with security tokens; single chemical sensor for multi-analyte mixture detection; RF energy harvesters; additively manufactured RF devices for 5G, IoT, RFID and smart city applications are also included in this special issue on high performance materials for implementing high-speed electronic systems.

In the area of material synthesis, modeling of dislocations behavior in various II-VI and III-V heterostructures and their gettering at sidewall bringing novel approaches are also featured

Coming hot on the heels, are recent developments on high performance devices include equivalent circuits models at room and 4.2K; quantum dot nonvolatile memories, 3D- confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications.

In summary, the papers selected for this special issue cover various aspects of h performance materials and emerging devices for implementing high-speed electronic systems. We would like to take this opportunity to express our thanks to the authors, participants, and reviewers for their contributions and active participation, networking, and knowledge sharing on a variety of research areas.

Jul 30, 2021

[special issue] on Modeling of μmWave and mmWave Electronic Devices for Wireless Systems

Guest editorial for the special issue 
on Modeling of μmWave and mmWave Electronic Devices for Wireless Systems: 
Connecting technologies to applications
Valeria Vadalà, Giovanni Crupi
First published: 27 July 2021; DOI: 10.1002/jnm.2940

The μmWave and mmWave frequencies have been historically associated with niche applications such as space and defense; however, in the last years wireless communications have caused a rapid growth of interest in mass-market applications, representing the enabling technology for the new Information Age where all “things” need to be connected. Internet of Things, Industry 4.0, and Smart Cities are portraits of this concept in different contexts, from entertainment to healthcare applications. This exciting scenario triggers the continuous increase of performance requirements such as huge bandwidth, low latency, and very high data rate of emerging wireless technologies (i.e., 5G and 6G). This special issue takes a step forward in the different branches of knowledge related to μmWave and mmWave devices, circuits, and systems, oriented to wireless applications from the device level up to the application level. From the reader's point of view, the goal is to drive to a comprehensive overview on salient aspects of these topics and to provide interesting hints to overcome the upcoming technological challenges.

REFERENCES:

[1] Cao K-J, Zhang A, Gao J-J. Sensitivity analysis and uncertainty estimation in small-signal modeling for InP HBT (invited paper). Int J Numer Model El. 2021; 34(5): 2851. DOI: 10.1002/jnm.2851
[2] Tang X, Yang T, Jia Y, Xu Y. FW-EM-based approach for scalable small-signal modeling of GaN HEMT with consideration of temperature-dependent resistances. Int J Numer Model El. 2021; 34(5):e2882. DOI: 10.1002/jnm.2882
[3] King JB. Efficient energy-conservative dispersive transistor modelling using discrete-time convolution and artificial neural networks. Int J Numer Model El. 2021; 34(5): 2894. DOI: 10.1002/jnm.2894
[4] Li Y, Mao S, Fu Y, et al. A scalable electrothermal model using a three-dimensional thermal analysis model for GaN-on-diamond high-electron-mobility transistors. Int J Numer Model El. 2021; 34(5):e2875. DOI: 10.1002/jnm.2875
[5] Alim MA, Ali MM, Crupi G. Measurement-based analysis of GaAs HEMT technologies: Multilayer D-H pseudomorphic HEMT versus conventional S-H HEMT. Int J Numer Model El. 2021; 34(5):e2873. DOI: 10.1002/jnm.2873
[6] Osmanoglu S, Ozbay E. From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad-flat no-leads packaged Gallium-Nitride low noise amplifier monolithic microwave integrated circuit. Int J Numer Model El. 2021; 34(5):e2859. DOI: 10.1002/jnm.2859
[7] Piacibello A, Costanzo F, Giofré R, et al. Evaluation of a stacked-FET cell for high-frequency applications (invited paper). Int J Numer Model El. 2021; 34(5):e2881. DOI: 10.1002/jnm.2881
[8] Wu M, Cai J, King J, Chen S, Su J, Cao W. Design of a multi-octave power amplifier using broadband load-pull X-parameters. Int J Numer Model El. 2021; 34(5):e2878. DOI: 10.1002/jnm.2878
[9] Abdulbari AA, Abdul Rahim SK, Soh PJ, Dahri MH, Eteng AA, Zeain MY. A review of hybrid couplers: State-of-the-art, applications, design issues and challenges. Int J Numer Model El. 2021; 34(5):e2919. DOI: 10.1002/jnm.2919
[10] Piltyay S, Bulashenko A, Sushko O, Bulashenko O, Demchenko I. Analytical modeling and optimization of new Ku-band tunable square waveguide iris-post polarizer. Int J Numer Model El. 2021; 34(5):e2890. DOI: 10.1002/jnm.2890
[11] Qas Elias BB, Soh PJ, Abdullah Al-Hadi A, Vandenbosch GAE. Design of a compact, wideband, and flexible rhombic antenna using CMA for WBAN/WLAN and 5G applications. Int J Numer Model El. 2020; 34(5):e2841. DOI: 10.1002/jnm.2841
[12] Zhang X, Cunjun R, Dai J, Ding Y, Ullah S, Kosar Fahad A. Design of a reconfigurable antenna based on graphene for terahertz communication. Int J Numer Model El. 2021; 34(5):e2911. DOI: 10.1002/jnm.2911
[13] Gatte MT, Soh PJ, Kadhim RA, Abd HJ, Ahmad RB. Modeling and performance evaluation of antennas coated using monolayer graphene in the millimeter and sub-millimeter wave bands. Int J Numer Model. 2021; 34(5):e2929. DOI: 10.1002/jnm.2929
[14] Xing C, Qi F, Liu Z, Wang Y, Guo S. Terahertz compressive imaging: understanding and improvement by a better strategy for data selection. Int J Numer Model El. 2021; 34(5):e2863. DOI: 10.1002/jnm.2863

Dec 10, 2020

[Foreword] Special Issue on Compact Modeling of Semiconductor Devices

Foreword
Special Issue on Compact Modeling of Semiconductor Devices
DOI: 10.1109/JEDS.2020.3039023

THIS Special Issue is dedicated to recent research in the field of compact modeling of semiconductor devices. This is the first J-EDS Special Issue on compact modeling. In the last years, a number of new semiconductor device structures, for electronic and photonic applications, have been developed. Compact models are needed for the incorporation of these new devices in integrated circuits. Therefore, a Special Issue was needed to present recent compact modeling solutions for semiconductor devices

A total of 8 regular papers and 2 invited papers have been accepted in this Special Issue. All papers, including the invited ones, were subjected to a thorough peer reviewing. A high number of reviewers participated in this process. This has resulted in a Special Issue containing very high-quality papers.  The published papers target compact modeling aspects for a wide number of devices, such as SiGe HBTs, IGBTs, SiC SB diodes, LDMOSFETs, Multi-Gate MOSFETs, RRAMs, TFET SRAMs, and organic TFTs. Open source Verilog-A compil- ing is also targeted by one paper. Different operation regimes and conditions are addressed: charging/discharging, THz, high power, tunneling radiation environments, . . . 

One invited paper, by U. Sharma and S. Mahapatra, addresses the modeling of HCD Kinetics for full VG/VD span under different experimental conditions across architectures and its SPICE implementation The other invited paper, by Fregonese et al., presents a review of THz characterization and modeling of SiGE HBTs.

I [BJ] would like to thank the work done by the rest of the Editors of this Special Issue and also by all the reviewers who participated in this process. And of course, I want to thank all the authors for their interest in submitting papers to this Special Issue. Thanks to authors, reviewers, and editors, this high-quality Special Issue has been possible.

BENJAMIN IÑIGUEZ, Guest Editor-in-Chief
Department of Electronic, Electrical and
Automatic Control Engineering
University Rovira i Virgili
43007 Catalonia, Spain

YOGESH SINGH CHAUHAN, Guest Associate Editor
Department of Electrical Engineering
Indian Institute of Technology Kanpur
Kanpur 208016, India

SLOBODAN MIJALKOVIC, Guest Associate Editor
Simulation Group
EDA Division
Silvaco Europe Ltd.
Cambridgeshire PE27 5JL, U.K.

KEJUN XIA, Guest Associate Editor
Department of Front End Innovation
NXP Semiconductors
Chandler, AZ 85224 USA
JUNG-SUK GOO, Guest Associate Editor
Department of Compact Model Development
GLOBALFOUNDRIES Inc.
Santa Clara, CA 95054 USA

MARCELO PAVANELLO, Guest Associate Editor
Department of Electrical Engineering
Centro Universitario FEI
09850-901 São Bernardo do Campo, Brazil

MAREK MIERZWINSKI, Guest Associate Editor
Department of PathWave Software and Solutions
Keysight Technologies
Santa Rosa, CA 95403 USA
(e-mail: )

WLADEK GRABINSKI, Guest Associate Editor
Department of Research and Development Modelling
GMC Consulting
1291 Commugny, Switzerland

Oct 8, 2020

Special IJHSES Issue on Advancements in Smart Grid Technologies

0 cover

Call for Papers


Special Issue on Advancements in Smart Grid Technologies

This special issue is on electrical power generation, transmission, distribution and utilization in smart grid, from the viewpoints of individual power system elements and their integration, interaction and technological advancement.

The special issue focuses on microelectronic systems, circuits, power control and soft computing techniques in smart grid. It includes, but are not limited to, the following:

  • Renewable & Sustainable Energy Technologies
  • Cloud-assisted smart grid architectures and development
  • Internet-centric smart grid solutions
  • Case studies on recent advances in smart grid and renewable energy system
  • Information and communication technology for enhancing smart grid and renewable energy system
  • Future of renewable energy sources in environmental protection
  • Sustainable computational methods to evaluate the optimization of renewable energy systems
  • Networking and data mining in smart grids for continuous sustainable development
  • Threat, challenges & opportunity of integrating smart grid and renewable energy system
  • Generation techniques ranging from advances in conventional electromechanical methods, through nuclear power generation, to renewable energy generation.
  • A study on the smart grid and renewable energy system for reducing the complexity of power grids
  • Distribution techniques, equipment development, and smart grids.
  • Renewable power generation and clean energy technologies
  • Distributed energy resources and storage
  • Modern power grid devices, sensors and wireless technologies
Paper Submission and Review Schedule:
  • First announcement: October. 12th 2020
  • Submission Deadline: November30th 2020
  • Final notification: January 10, 2020
  • Publication Date: June 30th 2020

Camera ready articles should be sent to the Guest Editor for consideration. Please specify the research topic on the cover page.

IJHSES Editor-in-Chiefs:
Michael Shur, Rensselaer Polytechnic Institute (USA)
Wladek Grabinski, MOS-AK (EU)

Guest Editor:
Naresh Kumar YadavD.C.R.U.S.T, Murthal (India)

Aug 31, 2020

[JICS] SBMicro2020 Special Section Issue

Journal of Integrated Circuits and Systems
SBMicro2020 Special Section Issue
Vol 15 No 2 (2020)

The Journal of Integrated Circuits and Systems is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering intended to present state-of-art papers on Integrated Circuits and Systems, covering the fields of Process and Materials, Device and Characterization, Design, Test and CAD, among other relevant topics. The JICS is indexed in Scopus and Scimagojr.

SBMicro2020 Special Section Guest Editors:
Durga Misra, New Jersey Institute of Technology – NJIT, United States
Michelly de Souza, Centro Universitário FEI, Brazil

Online ISSN: 1872-0234 (from 2017 on)
Printed ISSN: 1807-1953 (prior to 2017)
Published: 2020-08-23


Dec 22, 2017

[Special Issue] TED on “Compact Modeling for Circuit Design"

Call for papers for 
a Special Issue of IEEE TED
on
Compact Modeling for Circuit Design

Submission deadline: April 30, 2018               Publication date: January 2019

In order to capture the full potential of semiconductor devices, compact device models and design software are critically needed. Predictive and physical device and circuit design software are required to accelerate development cycles and tackle issues of device efficiency, manufacturing yield and product stability. The performance/accuracy of the design software is dependent on the availability of accurate device models, and for circuit design, compact models.

In particular, compact device models are the vehicle that allows the design of circuits using the targeted devices. The compact model should not only accurately capture the physics of the device in all operation regimes, but at the same time should also have an analytical or semi-analytical formulation to be used in automated design tools for the simulation of circuits containing several or many devices. On the other hand, compact models can also be used as a tool to make clear estimations and predictions of the performances of future devices following technological trends. The lack of adequate compact models for a number of emerging devices is mostly due to the insufficient understanding of the physical mechanisms that govern their behaviours. Regarding many emerging non-silicon structures, devices, circuit and system designers very often rely on empirical behavioural macro-models and/or use existing silicon device compact models based on the conventional understanding of transport processes. However, for these emerging non-silicon devices, neither approach provides a fully adequate device description under all operation conditions, nor the quantitative predictive quality required for the accurate production quality design.

Therefore, the main objective of this dedicated special issue is to engage Electron Devices Community in a serious discussion with their scholarly contributions specifically focused on solving major challenges in the broad area of compact device modeling for circuit design.

Suggested topics include but not limited to:
  1. Silicon MOSFET modeling: Advanced Bulk MOSFETs; SOl MOSFETs; Multi-Gate MOSFETs: Double-Gate MOSFETs, Surrounding-Gate MOSFETs, FinFETs, UTB SOI MOSFETs; Junctionless MuGFETs; Power and High Voltage MOSFETs.
  2. Junction-based and compound semiconductor FET modeling: Advanced MESFETs; Advanced HEMTs; lIl-V and Ill-N; MOSFETs; Advanced IFETs.
  3. Diode and bipolar transistor modeling: Advanced BJTs; HBTs; IGBTs; pn and pin diodes; Varactors.
  4. Emerging transistor modeling: Tunnel FETs; Molecular transistors; Single Electron Transistors; Quantum Dot Transistors; Negative Capacitance Transistors.
  5. Emerging semiconductor devices: Memories, MRAM, PCRAM etc.; Spintronic devices; Layered/2D materials
  6. Thin-Film FETS (TFT): a-Si:H TFTs; Polycrystalline Si TFTs; OTFTs and OECTs; Oxide TFTs; Single-crystal TFTs.
  7. Modeling of physical effects: Noise; High frequency operation; Mismatch; Strain; High energy particle interactions in ICs (Cosmic rays and energy beams); ESD events; Ballistic and quasi-ballistic transport; Layout dependent effects.
  8. Photonic devices: LEDs and OLEDs; Photodiodes; Solar cells; Photodetectors; SPADs.
  9. Model implementation in EDA tools and applications: Model code adaptation to EDA tools; Computational model performances in design tools; Challenges of model implementation in design tools; Compact model applications to variation and statistical analysis; Compact model applications to thermal analysis; Compact model applications to design exploration; Compact model applications to design optimization; Compact model applications to device process improvements; Compact modeling for BSD prediction; Circuit design using new compact models.

Submission instructions: Manuscripts should he submitted in a double column format using an IEEE style file Please visit the following link to download the templates:
http://www,ieeeiorg/publicationsistandards/publications/authors/author7templates,html
In your cover letter, please indicate that your submission is for this special issue. Please submit papers using the website: http://mc.manuscriDtcentral.com/ted

Guest Editors:
  1. Benjamin Iniguez, URV, Tarragona (SP)
  2. Yogesh Chauan, IIT Kanpur (IN) 
  3. Andries Scholten, NXP Semiconductors, Eindhoven (NL)
  4. Ananda Roy, Intel Corporation, Portland, OR (USA)
  5. Slobodan Mijalkovic, Silvaco Europe Ltd, St. Ives (UK)
  6. Sadayuki Yoshitomi, Toshiba Corporation, Tokyo (J)
  7. Kejun Xia, NXP Semiconductors, Phoenix, AZ (USA) 
  8. Wladek Grabinski, GMC Consulting, Commugny (CH) 
  9. Kaikai Xu, UEST of China, Chengdu (CN)