[paper] 11.8 GHz Fin Resonant Body Transistor

Analysis and Modeling of an 11.8 GHz Fin Resonant Body Transistor 

in a 14nm FinFET CMOS Process 

Udit Rawat, Student Member, IEEE, Bichoy Bahr*, Member, IEEE, 

and Dana Weinstein, Senior Member, IEEE

arXiv:2107.04502v1 [physics.app-ph] 9 Jul 2021

 

Department of Electrical Engineering, Purdue University, West Lafayette USA

*Kilby Labs - Texas Instruments, Dallas, TX, USA.

Abstract: In this work, a compact model is presented for a 14 nm CMOS-based FinFET Resonant Body Transistor (fRBT) operating at a frequency of 11.8 GHz and targeting RF frequency generation/filtering for next generation radio communication, clocking, and sensing applications. Analysis of the phononic dispersion characteristics of the device, which informs the model development, shows the presence of polarization exchange due to the periodic nature of the back-end-of-line (BEOL) metal PnC. An eigenfrequency-based extraction process, applicable to resonators based on electrostatic force transduction, has been used to model the resonance cavity. Augmented forms of the BSIM-CMG (Common Multi-Gate) model for FinFETs are used to model the drive and sense transistors in the fRBT. This model framework allows easy integration with the foundry-supplied process design kits (PDKs) and circuit simulators while being flexible towards change in transduction mechanisms and device architecture. Ultimately, the behaviour is validated against RF measured data for the fabricated fRBT device under different operating conditions, leading to the demonstration of the first complete model for this class of resonant device integrated seamlessly in the CMOS stack.

Fig: Complete 3D FEM Simulation model depicting two adjoining fRBT unit cells. Mx (x=1-3) and Cy (y=4-6) represent the first 6 metal levels that form a part of the BEOL PnC.

Acknowledgement: This work was supported in part by the DARPA MIDAS Program.

 

[review] CNTFET Technology for RF Applications

CNTFET Technology for RF Applications: Review and Future Perspective 

Martin Hartmann^1,2, Sascha Hermann^1,2,3, Phil F. Marsh⁴, Christopher Rutherglen⁴, 

Dawei Wang⁵, Li Ding⁶, Lian-Mao Peng⁶, Martin Claus⁷ 

and Michael Schröter⁷ (Senior Member, IEEE)

(Invited Paper)

in IEEE Journal of Microwaves, vol. 1, no. 1, pp. 275-287, winter 2021, 

DOI: 10.1109/JMW.2020.3033781

1Center for Microtechnology, Chemnitz University of Technology, 09111 Chemnitz, Germany
2Center for Advancing Electronics Dresden, 09111 Chemnitz, Chemnitz
3Fraunhofer Institute for Electronic Nanosystems, 09126 Chemnitz, Germany
4Carbonics Inc., Culver City, CA 90230 USA
5Carbon Technology Inc., Irvine, CA 92619 USA
6Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
7Chair for Electron Devices and Integrated Circuits, Technical University Dresden, 01069 Dresden, Germany

Abstract: RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for improvements. This review compiles and compares the different CNT integration technologies, the achieved RF results as well as demonstrated RF circuits. Moreover, it suggests approaches to enhance the RF performance of CNTFETs further to allow more profound CNTFET based systems e.g., on flexible substrates, highly dense 3D stacks, heterogeneously combined with incumbent technologies or an all-CNT system on a chip.

Fig: (a) sketch of a T-shape top gate on 4′′ wafer and (b) corresponding SEM image, (c) SEM image [I] in false colors depicting a multifinger buried gate CNTFET on an 8" wafer [II].

Acknowledgement: This work was supported in part by the German Research Foundation (DFG) through the Cluster of Excellence “Center for Advancing Electronics Dresden” (EXC1056/1); in part by the Federal Ministry of Education and Research under the project reference numbers 16FMD01K, 16FMD02 and 16FMD03, under the individual DFG Grant SCR695/6%25; in part by the National Key Research & Development Program under Grant 2016YFA0201901; in part by the National Science Foundation of China under Grants 61888102 and 61671020; in part by the Beijing Municipal Science and Technology Commission under Grant Z181100004418011; in part by the King Abdulaziz City for Science and Technology (KACST); in part by The Saudi Technology Development and Investment Company (TAQNIA); in part by the U.S. Army STTR Contract W911NF19P002; and in part by the SBIR programs from the U.S. National Science Foundation and the U.S. Air Force Research Laboratory.

REF:

[I] C. Rutherglen et al., "Wafer-scalable aligned carbon nanotube transistors operating at frequencies of over 100 GHz", Nature Electron., vol. 2, no. 11, pp. 530-539, 2019.

[II] M. Hartmann et al., "Gate spacer investigation for improving the speed of high-frequency carbon nanotube-based field-effect transistors", ACS Appl. Mater. Interfaces, vol. 12, no. 24, pp. 27461-27466, 2020.

[papers] compact modeling

Rabnawaz Sarmad Uqaili, Faraz Bashir Soomro, Junaid Ahmed Uqaili, Ahsin Murtaza Bughio 

and Khalid Ali Khan

Study on Compact Equivalent Circuit Model for RF CMOS Transistor 

International Journal of Scientific & Technology Research 

Vol.10, Issue 02, February 2021 ISSN 2277-8616

Abstract: In this study, a physical-based radio-frequency (RF) compact equivalent circuit model (CECM) for complementary metal-oxidesemiconductor (CMOS) transistor and its parameter extraction is presented. The whole structure of CECM that includes a small-signal equivalent circuit model of the transistor, a MOSFET small-signal substrate model, an input and output ground-signal-ground (GSG) pad model, a pad coupling model and a metal interconnection model are briefly studied and discussed. Based on this study, a complete test structure model for RF CMOS is designed and the initial values of parameters are extracted by using the analytical method. The multi-bias scattering parameters (S-Parameters) of model correspondence to the experimentation are validated up to 66 GHz and 220 GHz respectively. A good agreement has been achieved between the simulation and experimental under multi-bias conditions.

Fig: Complete CECM for RF CMOS transistor with an entire test structure.

---

El Mashade, Mohamed B., and Ahmed Abdel Monem

Transient model for modern microelectronic devices applicable to EKV PMOS model 

Radioelectronics and Communications Systems 

Vol.64, no. 2 (2021): 64-79

Abstract: Massive advances in microelectronic manufacturing technology with an exponential growth of their complexity and speed are needed to ensure a continuous development of novel techniques, structures, devices, circuits and systems. This paper is intended for the introduction of a new PMOS transient model for modern microelectronic devices that provides a fast transient response. Such suggested model expresses the transient terminal currents as polynomial functions of the normalized channel charge densities at the channel bounds with the assistance of a modified version of the cubic spline collocation methodology in symmetrical telescopic fashion. Additionally, the optimum number of segments, which is suitable for the new version of the cubic spline collocation algorithm, is investigated. Moreover, the normalized channel charge density at collocation points is modeled in terms of its values at the channel bounds through the quasi-static approach. Furthermore, by means of introducing an inverse function for the normalized overdrive channel voltage, the transient terminal currents are formulated as a function of the terminal voltages. In comparison with usual cubic spline collocation structure, the novel model has much better accuracy in its application to EKV structure. The developed model has been applied to the standard 0.15 mm technology and validated by MATLAB R2014a. The obtained results demonstrate that it gives a very high degree of relative accuracy, on average of 99%, for the total time and exhibits absolute error of less than 5% of the maximum value, in its worst case.

---

Rakeshkumar Mahto and Reshma John 

Modeling of Photovoltaic Module 

(April 1st 2021)

DOI: 10.5772/intechopen.97082. 

Abstract: A Photovoltaic (PV) cell is a device that converts sunlight or incident light into direct current (DC) based electricity. Among other forms of renewable energy, PV-based power sources are considered a cleaner form of energy generation. Due to lower prices and increased efficiency, they have become much more popular than any other renewable energy source. In a PV module, PV cells are connected in a series and parallel configuration, depending on the voltage and current rating, respectively. Hence, PV modules tend to have a fixed topology. However, in the case of partial shading, mismatching or failure of a single PV cell can lead to many anomalies in a PV module’s functioning. If proper attention is not given, it can lead to the forward biasing of healthy PV cells in the module, causing them to consume the electricity instead of producing it, hence reducing the PV module’s overall efficiency. Hence, to further the PV module research, it is essential to have an approximate way to model them. Doing so allows for understanding the design’s pros and cons before deploying the PV module-based power system in the field. In the last decade, many mathematical models for PV cell simulation and modeling techniques have been proposed. The most popular among all the techniques are diode based PV modeling. In this book chapter, the author will present a double diode based PV cell modeling. Later, the PV module modeling will be presented using these techniques that incorporate mismatch, partial shading, and open/short fault. The partial shading and mismatch are reduced by incorporating a bypass diode along with a group of four PV cells. The mathematical model for showing the effectiveness of bypass diode with PV cells in reducing partial shading effect will also be presented. Additionally, in recent times besides fixed topology of series–parallel, Total Cross-Tied (TCT), Bridge Link (BL), and Honey-Comb (H-C) have shown a better capability in dealing with partial shading and mismatch. The book chapter will also cover PV module modeling using TCT, BL, and H-C in detail.

Available: https://www.intechopen.com/online-first/modeling-of-photovoltaic-module

[paper] CNTFET Technology for RF Applications

Martin Hartmann^1,2, Sascha Hermann^1,2,3, Phil F. Marsh⁴, Christopher Rutherglen⁴, 

Dawei Wang⁵, Li Ding⁶, Lian-Mao Peng⁶, Martin Claus⁷, 

and Michael Schröter⁷ (Senior Member, IEEE)

CNTFET Technology for RF Applications:

Review and Future Perspective

(Invited Paper)

IEEE Journal of Microwaves, vol. 1, no. 1, pp. 275-287, 2021

DOI: 10.1109/JMW.2020.3033781

¹Center for Microtechnology, Chemnitz University of Technology, Chemnitz, Germany
²Center for Advancing Electronics Dresden, Germany
³Fraunhofer Institute for Electronic Nanosystems, Chemnitz, Germany
⁴Carbonics Inc., Culver City, USA
⁵Carbon Technology Inc., Irvine, USA
⁶Key Laboratory for the Physics and Chemistry of Nanodevices 

and Center for Carbon-based Electronics,  Peking University, China
⁷Chair for Electron Devices and Integrated Circuits, Technical University Dresden, Germany

Abstract: RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for improvements. This review compiles and compares the different CNT integration technologies, the achieved RF results as well as demonstrated RF circuits. Moreover, it suggests approaches to enhance the RF performance of CNTFETs further to allow more profound CNTFET based systems e.g., on flexible substrates, highly dense 3D stacks, heterogeneously combined with incumbent technologies or an all-CNT system on a chip.

Fig: (a) sketch of a T-shape top gate on 4" wafer and (b) corresponding SEM image,

(c) SEM image in false colors depicting a multifinger buried gate CNTFET on an 8" wafer.

Acknowledgement: This work was supported in part by the German Research Foundation (DFG) through the Cluster of Excellence “Center for Advancing Electronics Dresden” (EXC1056/1); in part by the Federal Ministry of Education and Research under the project reference numbers 16FMD01K, 16FMD02 and 16FMD03, under the individual DFG Grant SCR695/6%25; in part by the National Key Research & Development Program under Grant 2016YFA0201901; in part by the National Science Foundation of China under Grants 61888102 and 61671020; in part by the Beijing Municipal Science and Technology Commission under Grant Z181100004418011; in part by the King Abdulaziz City for Science and Technology (KACST); in part by the The Saudi Technology Development and Investment Company (TAQNIA); in part by the U.S. Army STTR Contract W911NF19P002; and in part by the SBIR programs from the U.S. National Science Foundation and the U.S. Air Force Research Laboratory.

[ESSCIRC 2015] Low-power analog RF circuit design based on the inversion coefficient

[ref] Enz, Christian; Chalkiadaki, Maria-Anna; Mangla, Anurag, "Low-power analog/RF circuit design based on the inversion coefficient," in ESSCIRC 2015 - 41st , vol., no., pp.202-208, 14-18 Sept. 2015

Abstract: This paper discusses the concept of the inversion coefficient as an essential design parameter that spans the entire range of operating points from weak via moderate to strong inversion, including velocity saturation. Several figures-of-merit based on the inversion coefficient, especially suitable for the design of low-power analog and RF circuits, are presented. These figures-of-merit incorporate the various trade-offs encountered in analog and RF circuit design. The use of the inversion coefficient and the derived figures-of-merit for optimization and design is demonstrated through simple examples. Finally, the simplicity of the inversion coefficient based analytical models is emphasized by their favorable comparison against measurements of a commercial 40-nm bulk CMOS process as well as with simulations using the BSIM6 model.

Keywords: Analytical models, Integrated circuits, Noise, Radio frequency, Silicon, Transconductance, Transistors, BSIM6

URL / doi: 10.1109/ESSCIRC.2015.7313863