Showing posts with label Analytical models. Show all posts
Showing posts with label Analytical models. Show all posts

Nov 11, 2019

8th International NRNU MEPhI Workshop

VIII Международный научно-методический семинар по средствам автоматизированного проектирования интегральных микросхем для физического эксперимента совместно с компанией Cadence

it is our pleasure to announce the 8th International Workshop and school on computer aided design of integrated circuits for physical experiments to be held at NRNU MEPhI on November 25-27, 2019. The Workshop and school are organized by NRNU MEPhI jointly with Cadence Design Systems. The program and further information are available via site cad.mephi.ru.

Participation in the event is free of charge but registration is necessary.

E. Atkin, NRNU MEPhI event secretary,

Aug 7, 2017

ICCDCS 2017

Tenth International Caribbean Conference on Devices, Circuits and Systems (ICCDCS 2017)

June 5-7 2017, Cozumel, México
08:00 to 9:00RegistrationRegistrationRegistration 
08:45 to 9:00Opening Ceremony
09:00 to 10:00Key Note 1: "Adaptive Heterogenous Multi-Core Technologies- Intelligent, Interconnected and Integrated Cyber-Physical Systems (I3CPS)"Jürgen BeckerKey Note 3: "The Life and Times of Eugeni García"Benjamín ÍñiguezKey Note 6: "On the Extraction Methods for MOSFET Series Resistance and Mobility Degradation using a Single Test Device",Adelmo Ortiz Conde
10:00 to 10:30BreakBreakBreak
10:30 to 12:30Session 1Session 3Session 5
10:30 to 10:50"Model Based Photopic Electroretinogram Source Separation: A Multiresolution Analysis Approach"Prashanth Chetlur Adithya, Alaql Abdulrahman, Radouil Tzekov, Ravi Sankar and Wilfrido Moreno"A Programmable CMOS Voltage Controlled Ring Oscillator for Radio-Frequency Diathermy On-chip Circuit"Antonio Corres- Matamoros, Esteban Martinez-Guerrero and Jose E. Rayas-Sanchez"Health Index Assessment for Power Transformers with Thermal Upgraded Paper up to 230kV, Using Fuzzy Inference. Part II: A Sensibility Analysis"Diego Chacón, Juan Pablo Lata and Ricardo Medina
10:50 to 11:10"Analytical Model Parameter Determination for Microwave On-Chip Inductors up to the Second Resonant Frequency"José Valdés Rayón, Reydezel Torres and Roberto Murphy"A logarithmic CMOS image sensor with wide output voltage swing range"Fernando Campos, Mário Bordon, Marcelo Silva and Jacobus Swart"Implementation Model Using a Hippocratic Protocol in Mobile Terminals with NFC Technology"Carlos Kowalevicz, Jose Pirrone Puma and Monica Huerta
11:10 to 11:30"Energy Consumption Improvement based on Distance Adaptive Modulation in Optical Elastic Network"Sabi Bandiri, Rafael Braga, Tales Pimenta and Danilo Spadoti"Improving Magnitude Response in Two-Stage Corrector Comb Structure"Gordana Jovanovic Dolecek and Lyda Herrera Sepulveda"Internet of Things as an Attack Vector to Critical Infrastructures of Cities"Pablo Leonidas Gallegos-Segovia, Jack Fernando M. Larios-Rosillo and Erwin Jairo Sacoto-Cabrera
11:30 to 11:50"Switching Region Analysis for SOTB Technology"Carlos Cortes Torres, Nobuyuki Yamasaki and Hideharu Amano"Analysis of the influence of the buffer layer in the characteristic impedance of electro-optic modulators"Ana Gabriela Correa Mena, Luis Alejandro González Mondragón, Leidy Johana Quinteros Rodríguez, José Valdés Rayón and Ignacio Enrique Zaldívar Huerta"Sensors for Parkinson's Disease Evaluation"Raquel Torres, Monica Huerta, Ricardo Gonzalez, Roger Clotet and Juan Pablo Bermeo
11:50 to 12:10"Scalable Models to Represent the Via-Pad Capacitance and Via-Traces Inductance in Multilayer PCB High-Speed Interconnects"Abraham Isidoro Muñoz, Miguel Angel Tlaxcalteco Matus, Reydezel Torres Torres and Gaudencio Hernandez Sosa"Impact of neglecting the metal losses on the extraction of the relative permittivity from PCB transmission line measurements"Erika Yazmin Teran Bahena and Reydezel Torres Torres"QoS Evaluation of VPN in a Raspberry Pi devices over Wireless Network"Luis Caldas, Juan Jara and Mónica Huerta
12:10 to 12:30"Implementation of a Reconfigurable Neural Network in FPGA"Janaina Oliveira, Robson Moreno, Odilon Dutra and Tales Pimenta"Reconfigurable FIR Filter Coefficient Optimization in Post-Silicon Validation to Improve Eye Diagram for Optical Interconnects",Ismael Duron-Rosales, Francisco E. Rangel-Patino, Jose E. Rayas-Sanchez, Jose L. Chavez-Hurtado and Nagib Hakim"A Proposed Digital Predistorter Based on NLMS and PSO Algorithms"Omar Alngar, Walid El-Deeb and El-Sayed El-Rabaie
12:30 to 15:00LunchLunchClosing remarks
15:00 to 16:00Key Note 2: "Following the Path of 3D Integration"Malgorzata Chrzanowska-JeskeKey Note 4: “Modeling and Verification of Heterogeneous Systems”Filipe Vinci
16:00 to 16:15BreakPoster Introduction*
16:15 to 17:55Session 2Session 4
16:15 to 16:35"MRAM control Transistor Resilience against Heavy-Ion Impacts", Walter Enrique Calienes Bartra, Raphael Brum, Guilherme Flach and Ricardo ReisBreak w/poster session (16:15 to 17:00)
16:35 to 16:55"A Charge-controlled Memristor Model for Image Edge Detection with a Memristive Grid"Arturo Sarmiento and Yojanes Rodríguez-Velásquez
16:55 to 17:15"Characterization and modelling of Ag/TiO2/ITO devices exhibiting bipolar memristive properties", Jesús Jiménez-León, Arturo Sarmiento, Carlos De La Cruz Blas and Cristina Gomez-Polo
17:15 to 17:35"Assessing the accuracy of the open, short and open-short de-embedding methods for on-chip transmission line s-parameters measurements"Juan Garcia Santos and Reydezel TorresKey Note 5: (17:00 to 18:00) "Innovation by ASIC design and emerging substream markets"Jacobus Swart
17:35 to 17:55"Evaluation of Interconnects Based on Electromigration Criteria and Circuit Performance"Rafael Nunes, Roberto Orio and Jacobus Swart
19:00Welcome Cocktail
19:30Conference Banquet
Poster Session:
"Differentiated synchronization plus FHIR a solution for EMR's Ecosystem", Roger Clotet, Emilio Hernández and Monica Karel Huerta
"Design and Validation of a Portable Radio-Frequency Diathermy Prototype", Antonio Corres-Matamoros, Esteban Martinez-Guerrero and Jose E. Rayas-Sanchez
"Stimulating social interaction among elderly people through sporadic social networks", Jorge Osmani Ordoñez-Ordoñez, Jack Fernando Bravo-Torres, Oscar David Sari-Villa, Esteban Fernando Ordoñez-Morales, Martín López-Nores and Yolanda Blanco-Fernández
"Sensing Climatic Variables in a Orchid Greenhouse", Luis Fernandez, Mónica Huerta, Giovanni Sagbay, Roger Clotet and Angel Soto
"Low cost system for monitoring physiological signals using FPGA and Android Tablet", J. Bucheli, D. Rivas, J. Gavilema, D. Mullo, J. L. Carrillo, M. Huerta

Jan 10, 2017

ICMTS 2017 in Grenoble (F)

March 27-30, 2017, MINATEC, Grenoble (F)
  • Monday 27th March
    • Tutorials
    • Welcome Reception
  • Tuesday 28th March
    • SESSION 1: Novel Test Structure
    • SESSION 2: Novel Materials
    • SESSION 3: Variability
    • SESSION Exhibitions
  • Wednesday 29th March
    • SESSION 4: Device Modeling
    • SESSION 5: RF and HV
    • SESSION 6: Device Testing
    • SESSION 7: Sensor Test Structures
  • Thursday 30th March
    • SESSION 8: Low Frequency Noise
    • SESSION 9: Advanced Test Methods

Dec 13, 2016

[paper] A surface potential large signal model for AlGaN/GaN HEMTs

A surface potential large signal model for AlGaN/GaN HEMTs
Q. Wu, Y. Xu, Z. Wen, Y. Wang and R. Xu
2016 11th EuMIC, London, UK, 2016, pp. 349-352

doi: 10.1109/EuMIC.2016.7777562

Abstract: This paper presents an accurate analytical surface-potential-based compact model for AlGaN/GaN HEMTs for SPICE-like circuit simulation. Considering the important energy level E0, an easy-implemented analytical continuous expression for the fermi level position Ef was deduced to obtain the surface potential (SP) φs. Then analytical core models for intrinsic charge and drain current are derived based on φs. The model has been implemented in Agilent ADS by using symbolic defined device. Excellent agreement of DC I-V, fundamental output power, power added efficiency and gain is obtained for the first time compared with measurement results. Moreover, the effect of physical parameter such as the barrier thickness d on device characteristic is researched on the basic of this model. The results show that the proposed physical based model can be useful for technological parameters analysis and optimization of process.

[read more: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7777562&isnumber=7777458]

Dec 12, 2016

[Fellowship] Physics Based Modeling Simulation and Electrical Characterization

Physics Based Modeling Simulation and Electrical Characterization 
of Quantum Effects in Multigate MOSFETs
[DRDO Fellowship]

Dr. Vimala Palanichamy is looking for Junior Research Fellowship (INR 25000 Stipend per Month) for this project funded by Defense Research and Development Organization (DRDO), Government of India. Please refer below advertisement for applying for Junior Research Fellowship for working on the project: 

Nov 11, 2015

[ESSCIRC 2015] Low-power analog RF circuit design based on the inversion coefficient

[ref] Enz, Christian; Chalkiadaki, Maria-Anna; Mangla, Anurag, "Low-power analog/RF circuit design based on the inversion coefficient," in ESSCIRC 2015 - 41st , vol., no., pp.202-208, 14-18 Sept. 2015

Abstract: This paper discusses the concept of the inversion coefficient as an essential design parameter that spans the entire range of operating points from weak via moderate to strong inversion, including velocity saturation. Several figures-of-merit based on the inversion coefficient, especially suitable for the design of low-power analog and RF circuits, are presented. These figures-of-merit incorporate the various trade-offs encountered in analog and RF circuit design. The use of the inversion coefficient and the derived figures-of-merit for optimization and design is demonstrated through simple examples. Finally, the simplicity of the inversion coefficient based analytical models is emphasized by their favorable comparison against measurements of a commercial 40-nm bulk CMOS process as well as with simulations using the BSIM6 model.

Keywords: Analytical models, Integrated circuits, Noise, Radio frequency, Silicon, Transconductance, Transistors, BSIM6

URL / doi: 10.1109/ESSCIRC.2015.7313863