Tuesday, 21 February 2017

[paper] Bipolar and MOS Transistors Under the Effect of Radiation

Measurements of the Electrical Characteristics of Bipolar and MOS Transistors
Under the Effect of Radiation
K. O. Petrosyants, L. M. SamburskiiI. A. KharitonovM. V. Kozhukhov
Meas Tech (2017) doi:10.1007/s11018-017-1100-z

ABSTRACT: The specific nature of the process of measuring the electrical characteristics of bipolar and metal-oxidesemiconductor (MOS) transistors subjected to the action of neutron, electron, and gamma irradiation is considered. An automated measurement system is developed. Examples illustrating the use of the system for investigations of the radiation hardness of transistors are presented and the parameters of SPICE models for use in circuit design (including SOI/SOS CMOS circuits with EKV-RAD macromodel) are determined.

Translated from Izmeritel’naya Tekhnika, No. 10, pp. 55–60, September, 2016 [read more...]

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