Training Course on Compact Modeling: Final Programme

The first edition of the Training Courses on Compact Modeling (TCCM) will be held in Tarragona (Catalonia, Spain) on June 30-July 1, in coordination with two other events partially or totally related to compact modeling: the 8th Graduate Student Meeting on Electronic Engineering (June 28-29) and the 3rd International Workshop on Compact Thin Film Transistor Modeling (July 2).

The Training Course will consist on 12 lectures addressing relevant topics in the compact modeling of advanced electron devices. In particular, emphasis will be given on MOSFETs (bulk, SOI, Multi-Gate and High Voltage MOS structures) and HEMTs.

The Training Courses on Compact Modeling are sponsored by the European Union FP7 “COMON” IAPP Project, the European Union FP7 NANOSIL Network of Excellence and the Universitat Rovira i Virgili in collaboration with the IEEE EDS Compact Modeling Technical Committee.


REGISTRATION IS OPEN

It is cheap and includes two lunches and one gala dinner. The advanced registration fee will be 100 Euro for students and 130 Euro for non-students. After June 13, the registration fee is 150 Euro for students and 180 Euro for non-students. Members of the teams participating in the COMON project are exempted from paying the fee, and members of teams participating in NANOSIL pay a reduced fee.

I want to remark that ON JUNE 30 AND JULY 1 THERE ARE NO SOCCER WORLD CUP MATCHES.

So, participants do not have to worry to miss soccer matches during the duration of the Training Course!


The final programme, with the timetable, is already available:

	Day 1: June 30, 2010 (Wednesday)
8:15		Training Courses Opening Benjamin Iniguez (Universitat Rovira i Virgili, Spain)
8:30		Statistical variability and corresponding compact model strategies Asen Asenov (University of Glasgow)
9:45		Electrical characterization of SOI and Multi-Gate MOSFETs Sorin Cristoloveanu (MINATEC and LETI, France)
11:00		Coffee Break
11:30		Transport modeling Tibor Grasser (TU-Wien, Austria)
12:45		Analytical 2D and 3D electrostatic modeling Tor A Fjeldly (UniK, Norway)
14:15		Lunch
15:15		Variability-conscious Circuit Designs for Low-voltage Nano-scale CMOS LSIs Kiyoo Itoh (Hitachi, Japan)
16:30		GNU/Open Source CAD Tools for Verilog-A Compact Model Standardization Wladek Grabinski
20:30		Gala Dinner
		Day 2: July 1, 2010 (Thursday)
8:30		Analytical small-signal modeling Benjamin Iniguez (Universitat Rovira i Virgili, Spain)
9:45		DC Parameter Extraction Antonio Cerdeira (Cinvestav, Mexico)
11:00		Coffee Break
11:30		Compact, High Frequency Equivalent Circuit Models for GaN, SiC, GaAs and CMOS FET Ilcho Angelov (Chalmers University, Sweden)
12:45		Noise modeling Jamal Deen (McMaster University, Canada)
14:15		Lunch
15:15		Electro-thermal and reliability modeling Renaud Gillon (On Semiconductor, Belgium)
16:30		Leakage power modeling for the reduction of power consumption in CMOS ICs Massimo Poncino (Politecnico di Torino, Italia)
17:45		Training Courses Closing

And nice weather is usual in Tarragona at the end of June/beginning of July. Participants who spend a few more days in Tarragona can enjoy the nice beaches around, or doing sightseeing in the Tarragona area, Barcelona (only 100 Km far from Tarragona) and other places in Catalonia.

Tarragona is well connected to Barcelona by rail and highway. There are direct buses from Barcelona Airport. Besides, there are direct flights to Reus Airport (less than 15 Km far from Tarragona) from many European cities by Ryanair.