Organizers: Jean-Michel Sallese; EPFL and Wladek Grabinski; GMC Consulting Host: Predrag Habas; EM Marin
Where: EPFL - Swiss Federal Institute of Technology, Lausanne, Room CO017 When: Friday, July 3, 2009, 5:00 pm
Title: An Insider’s View to the Swiss LP/LV CMOS Design History Presenter: Stefan Cserveny
Abstract: I worked the last 30 years at CEH - CSEM, the amazing Swiss crucible at the origin of the very low power integrated circuits, taking advantage of its highly professional, creative and enthusiastic teams and the close and fruitful collaboration with the EPFL and the Swiss industry. I will present some of these historical developments as viewed by the subjects in which I had the opportunity to add my contribution. After a short overview of my background and work done before joining the CEH, I will first present the early compact MOS modeling work done in order to satisfy the requirements for the LP/LV design including the near threshold range - a work setting the path towards the presently largely used EKV model. The following items are some of the sensor interface circuits, the realization of embedded low power non-volatile memories and, finally, the very low leakage SRAM memories essential for many critical applications.
Short Bio: Stefan Cserveny is retiring after 47 years of teaching and research and development activities as an electron device engineer and as a circuit designer, especially for designs requiring device expertise. The first 17 years he lectured electron devices and circuits at the Polytechnic Institute of Bucharest, Romania and at the Telecommunication Institute of Oran, Algeria, which he helped to create, writing several textbooks and scientific papers. In 1972 he obtained a one year specialization grant he spent at the University of California Berkeley where he received the M.S. degree in electrical engineering. In 1979 he joined the 17 years old CEH, which in 1984 became part of CSEM, getting involved with the LP/LV challenge first needed for the watch industry. In his position of scientific expert he contributed to research projects and ASIC developments; most interesting results have been published. He also participated in the BCTM technical program committee, reviewed a large number of papers and did consulting for Swiss companies.
The QUCS Team is also contributing to the MIXDES special session "Device Level Support for Emerging CMOS Technologies" organised by Daniel Tomaszewski; ITE, Poland and Wladek Grabiński; GMC Suisse (with MOS-AK/GSA Group and COMON EU Project coordination)
Frédéric Boeuf, Principal Engineer at STM, gave a short course at the VLSI Symposium 2009 in Kyoto. It is a synthesis on the silicon technology uses for system on chip applications, and some prospect about the future solutions.
I copy a post from Semiconductor International: IMEC Tips 10 nm Options at Tech Forum: "At the IMEC Technology Forum in Brussels, Belgium, IMEC Fellow Marc Heyns presented various CMOS transistor possibilities for 15 nm and beyond. "We are at the brink of a new era of innovation," Heyns said, adding that he sees no fundamental barriers to scaling to the 10 nm node. One roadmap involves the integration of new materials and structures over time..." (read more)
The 35th International Conference on Micro & Nano Engineering (MNE), to be held in Ghent, Belgium from 28 September to 1 October 2009.
The scope is about micro- and nano-fabrication and manufacturing using lithography and other nano-patterning related approaches. The conference brings together engineers and scientists from all over the world to discuss recent progress and future trends in the fabrication, manufacturing and application of micro-and nano-structures and devices. Applications in electronics, electromechanics, environment and life sciences are discussed such as: nanoelectronics, MEMS-NEMS, bioMEMS and lab-on-a-chip devices.
This workshop is intended to provide a forum for discussions and current practices on compact TFT modeling. The workshop is sponsored by IEEE EDS Compact Modeling Technical Committee in collaboration with IEEE UCL-Cambridge University EDS/LEOS Chapter joint chapter that is in the process of formation. Topics include include:
• Physics of TFTs and operating principles • Compact TFT device models for circuit simulation • Model implementation and circuit analysis techniques • Model parameter extraction techniques • Applications of compact TFT models in emerging products • Compact models for interconnects in active matrix flat panels
The deadline for Abstract Submission is July 15 2009.
The Division of Silicon Microsystem and Nanostructure (http://www.ite.waw.pl/en/Z02.php) at Institute of Electron Technology (http://www.ite.waw.pl/en/index.php), Warsaw, Poland is seeking an experienced researcher for a position in the frame of a European Marie Curie Project.
Area of work The researcher will work in the area of compact modelling of multi-gate MOSFETs. Two main topics should be covered during the researcher stay in ITE: - development of parameter extraction methods for multi-gate MOS devices, using I-V, C-V, G-V characteristics of sets of devices, and based on combination of global optimization (constrained or unconstrained) and local fitting approaches, - development of parameter extraction methods based on electrical characteristics of sets of multi-gate MOS devices, which account for parameters fluctuations within a wafer; (example: extraction of MOSFETs size variations DW, DL due to systematic and/or statistic photolithography and other processes fluctuations).
The work will be done in collaboration with a leading European semiconductor foundry, and leading modelling and characterization groups from European universities.
Contract details Temporary contract, duration 20 months, full time, starting date 1 October 2009. This postdoc post is funded by the Marie-Curie European Compact Modelling network. The net monthly salary is more than 2200 Euro/month.
Application deadline: 31 August 2009.
Contact: Dr. Daniel Tomaszewski, email: email@example.com
Requirements Candidates should possess either - a Ph.D. degree or - a M.Sc. or Dipl.-Ing. Degree and at least 4 years of research experience in electrical engineering, preferably in semiconductor microelectronics.
Good skills in written and spoken English are mandatory.
Desirable is research experience in the following areas: - Compact modeling of MOS devices - Characterization methods of MOS devices - Numerical simulation of MOS devices - Numerical methods - Programming
The RF & Nano Device group (http://www.tu-ilmenau.de/fakei/1342+M54099f70862.0.html) at TU Ilmenau (http://www.tu-ilmenau.de/uni/index.php) is seeking an experienced researcher for a position in the frame of a European Marie Curie Project.
The researcher will work on compact modeling of high-frequency transistors, in particular HEMTs (High Electron Mobility Transistor). He or she will be responsible for the development of compact models for the large-signal high-frequency behavior of HEMTs. This will include models for the dc current-voltage characteristics and the high-frequency large-signal behavior of HEMTs with special emphasis on the modeling of nonlinearities including the extraction of model parameters from experimental results. The work will be done in close contact to a leading European semiconductor foundry.
Contract details: Temporary contract, duration 20 months, full time, starting date 1 September 2009.
Application deadline: 31 July 2009.
Contact: PD Dr. Frank Schwierz, email: firstname.lastname@example.org
Requirements: Candidates should possess either
- a Ph.D. degree or
- a Master or Dipl.-Ing. Degree and at least 4 years of research experience
in electrical engineering, preferably in semiconductor electronics. Good skills in written and spoken English are mandatory.
Desirable is research experience in the following areas:
- Compact modeling of semiconductor devices
- Large-signal modeling and analysis
- Nonlinear behavior of semiconductor devices and modeling of nonlinearities.
"Negative Bias Temperature Instability in p-MOSFETs: Fundamentals, Characterization, Materials Dependence and Modeling" Speaker: Dr. Souvik Mahapatra, Dept. of Electrical Engineering, IIT Bombay Date: Tuesday, June. 9, 2009 Location: National Semiconductor, Building E1, Conference Center, 2900 Semiconductor Drive, Santa Clara, CA 95051.
More information at the IEEE Santa Clara Valley EDS Chapter Home Page.