Agilent Technologies Inc. announced the availability of a new parameter extraction solution for high voltage (HV) complementary metal oxide semiconductor (CMOS) devices used in a range of automotive and consumer products, as well as LCD and display driver applications. The HVMOS extraction package, for use with Agilent's Integrated Circuit Characterization and Analysis Program (IC-CAP) software platform, enables engineers to model HV CMOS devices using Synopsys' HSPICE simulator, HVMOS Level 66 compact model.
Implemented as a compact model in HSPICE, HVMOS Level 66 compact model outperforms most other HVMOS model solutions in speed and convergence. The HVMOS model includes all relevant physical effects unique to high-voltage operation, including symmetric and asymmetric source and drain resistances, quasi-saturation, transconductance fall off at high-gate voltage, and self-heating effects. As a result, it allows HV CMOS devices to be modeled with unparalleled DC and capacitance modeling accuracy and simulation speed. HVMOS models are used by both analog and digital designers during circuit simulation.
Source: Semiconductor Online
No comments:
Post a Comment